GB/T 45719-2025

Active

Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors

半导体器件 金属氧化物半导体（MOS） 晶体管的热载流子试验

Standard Type
GBT
ICS
31.080.01
CCS
L40
Status
Active
Issue Date
2025-05-30
Implementation
2025-09-01
Centralized Committee
工业和信息化部（电子）
Issuing Authority
国家市场监督管理总局、国家标准化管理委员会

Application Summary AI generated

This standard specifies the methodology for performing hot carrier injection (HCI) tests on MOS transistors, which is used to evaluate the long-term reliability and degradation of these devices under high electric field stress. It is applied in the semiconductor industry for quality assurance and qualification of integrated circuits, particularly in the design and manufacturing of CMOS logic and memory products. The test is critical for predicting device lifetime in applications such as microprocessors, power management ICs, and automotive electronics.

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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.