GB/T 45718-2025
ActiveSemiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers
半导体器件 内部金属层间的时间相关介电击穿（TDDB）试验
Application Summary AI generated
This standard specifies the time-dependent dielectric breakdown (TDDB) test method for inter-metal dielectric layers in semiconductor devices. It is applied in the reliability testing and qualification of integrated circuits, particularly for evaluating the long-term insulation integrity of dielectric films between metal interconnect layers under voltage and temperature stress. The standard is used by semiconductor manufacturers and quality assurance labs to predict device lifetime and ensure robust performance in high-reliability electronics.
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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.