GB/T 45716-2025
ActiveSemiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs)
半导体器件 金属氧化物半导体场效应晶体管（MOSFETs）的偏置温度不稳定性试验
Application Summary AI generated
This standard specifies the test method for evaluating bias temperature instability (BTI) in MOSFETs, a critical reliability concern for semiconductor devices. It is applied in the design, manufacturing, and quality assurance of integrated circuits and discrete MOSFETs, particularly for automotive, industrial, and consumer electronics requiring long-term stability. The test simulates accelerated aging under combined thermal and voltage stress to assess threshold voltage shifts and device degradation.
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