GB/T 43493.3-2023
ActiveSemiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Application Summary AI generated
This standard specifies a non-destructive test method using photoluminescence to identify and classify defects in silicon carbide homoepitaxial wafers intended for power semiconductor devices. It is applied in the manufacturing and quality control of SiC power electronics, particularly for evaluating epitaxial layer quality to ensure device reliability and performance. The standard is used by semiconductor fabs and inspection facilities to detect critical defects like dislocations and stacking faults without damaging the wafer.
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