GB/T 43493.2-2023
ActiveSemiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法
Application Summary AI generated
This standard specifies the optical inspection test method for identifying and classifying defects in silicon carbide homoepitaxial wafers used for power semiconductor devices. It is applied in the manufacturing and quality control of SiC power electronics, providing non-destructive criteria to detect defects such as dislocations, stacking faults, and micropipes using optical microscopy or automated optical inspection systems. The standard ensures consistent defect evaluation across production lines and research laboratories for high-voltage, high-efficiency power devices.
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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.