GB/T 43493.1-2023
ActiveSemiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类
Application Summary AI generated
This standard defines a classification system for defects in silicon carbide (SiC) homoepitaxial wafers used in power semiconductor devices. It provides non-destructive recognition criteria to categorize defects such as dislocations, stacking faults, and surface particles, enabling consistent quality assessment during wafer manufacturing and incoming inspection. The standard is applied in the power electronics industry, specifically for SiC device fabrication and quality control processes.
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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.