GB/T 40109-2021
ActiveSurface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon
表面化学分析 二次离子质谱 硅中硼深度剖析方法
Application Summary AI generated
This standard specifies the method for using secondary-ion mass spectrometry (SIMS) to measure the depth distribution of boron dopant in silicon wafers. It is applied in the semiconductor industry for quality control and process development, particularly for calibrating ion implantation and diffusion processes in integrated circuit fabrication. The standard ensures consistent and comparable depth profiling results across different laboratories and instruments.
Related Standards
GB/T 20724-2006
Method of thickness measurement for thin crystal by convergent beam electron diffraction
GB/T 28727-2012
Gas analysis - Determination of sulfides - Gas chromatograph with flame photometric detector
GB/T 14666-2003
Terms for analytical chemistry
GB/T 674-2003
Chemical reagent--Copper(II)oxide powder
GB/T 1265-2003
Chemical reagent--Sodium bromide
GB/T 656-2003
Chemical reagent--Ammonium dichromate
GB/T 606-2003
Chemical reagent--General method for the determination of water--Karl Fischer method
GB/T 19502-2004
Surface chemical analysis--Glowdischarge optical emission spectrometry(GD-OES)--Introduction to use
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.