GB/T 20724-2006
AbolishedMethod of thickness measurement for thin crystal by convergent beam electron diffraction
薄晶体厚度的会聚束电子衍射测定方法
Catalogue
前言 → 1 范围 → 2 规范性引用文件 → 3 术语和定义 → 4 原理 Foreword → 1 Scope → 2 Normative References → 3 Terms and Definitions → 4 Principle
Scope
This standard specifies the convergent beam electron diffraction method for determining the thickness of thin crystal specimens using a transmission electron microscope. This method is applicable to the determination of thin crystal thickness with linear dimensions ranging from 10⁻⁹ m to 0.1×10⁻³ m and thickness ranging from tens to hundreds of nanometers.
本标准规定了用透射电子显微镜测定薄晶体试样厚度的会聚束电子衍射方法。本方法适用于测定线度为10⁻⁹ m~0.1×10⁻³ m，厚度在几十至几百纳米范围的薄晶体厚度。
Normative References
Keywords
Application Summary AI generated
Researchers in materials science and electron microscopy use this standard to accurately measure the thickness of thin crystals using convergent beam electron diffraction. This standard is critical for characterizing nanomaterials and semiconductor devices, as thickness directly affects their physical and electrical properties. It provides a non-destructive, high-precision measurement method that aids in material development and quality control.
材料科学和电子显微学领域的研究人员使用该标准，通过会聚束电子衍射技术精确测量薄晶体的厚度。该标准对于纳米材料和半导体器件的表征至关重要，因为厚度直接影响其物理和电学性能。它提供了一种非破坏性的高精度测量方法，有助于材料研发和质量控制。
AI Summary AI generated
This standard specifies a method for measuring the thickness of thin crystals using a transmission electron microscope and convergent beam electron diffraction. It is applicable to crystal specimens with linear dimensions from nanometers to sub-millimeters and thicknesses from tens to hundreds of nanometers. The core principle involves analyzing the intensity distribution of Kossel-Möllenstedt fringes within the diffraction disk under the two-beam approximation to calculate thickness. The standard also references GB/T 18907-2002 for selected area electron diffraction analysis. This method provides a standardized approach for precise thickness measurement of thin crystals in materials science.
本标准规定了利用透射电子显微镜和会聚束电子衍射技术测定薄晶体厚度的方法。适用于线度在纳米到亚毫米、厚度在几十到几百纳米的晶体试样。核心原理是在双束近似条件下，通过分析衍射盘内的Kossel-Möllenstedt条纹强度分布来计算厚度。标准还引用了GB/T 18907-2002作为选区电子衍射的参考方法。该方法为材料科学中薄晶体厚度的精确测量提供了标准化手段。
Key Sentences extracted from text
本标准规定了用透射电子显微镜测定薄晶体试样厚度的会聚束电子衍射方法。
本方法适用于测定线度为10⁻⁹ m~0.1×10⁻³ m，厚度在几十至几百纳米范围的薄晶体厚度。
在双束近似条件下晶面(hkl)衍射斑内的强度分布I_i按式(1)计算。
利用双束近似条件下衍射盘内的Kossel-Möllenstedt条纹可精确测定薄晶体试样微区的厚度t。
进行电子衍射实验时，使晶体试样仅有一列晶面(hkl)满足布拉格反射条件的一种近似条件。
This standard specifies the convergent beam electron diffraction method for determining the thickness of thin crystal specimens using a transmission electron microscope.
This method is applicable to the determination of thin crystal thickness with linear dimensions ranging from 10⁻⁹ m to 0.1×10⁻³ m and thickness ranging from tens to hundreds of nanometers.
Under the two-beam approximation, the intensity distribution I_i within the diffraction disk of the (hkl) plane is calculated according to formula (1).
Using the Kossel-Möllenstedt fringes within the diffraction disk under the two-beam approximation, the thickness t of the thin crystal specimen microregion can be accurately determined.
An approximation condition in which only one set of crystal planes (hkl) satisfies the Bragg reflection condition when performing electron diffraction experiments.