GB/T 34326-2017
ActiveSurface chemical analysis—Depth profiling—Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
表面化学分析 深度剖析 AES和XPS深度剖析时离子束对准方法及其束流或束流密度测量方法
Application Summary AI generated
This standard specifies methods for aligning an ion beam with the analysis area and measuring the ion beam current or current density for depth profiling in Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It is applied in surface chemical analysis laboratories and materials research facilities to ensure accurate and reproducible sputter depth profiling of thin films, coatings, and layered structures. The standard is critical for quality control and failure analysis in industries such as semiconductor manufacturing, metallurgy, and corrosion science.
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