GB/T 32495-2016
ActiveSurface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of arsenic in silicon
表面化学分析 二次离子质谱 硅中砷的深度剖析方法
Application Summary AI generated
This standard specifies a method for using secondary-ion mass spectrometry (SIMS) to measure the depth distribution of arsenic (As) in silicon (Si) substrates. It is applied in the semiconductor industry for quality control and process development, particularly for analyzing ion-implanted or diffused arsenic layers in silicon wafers. The method is used to verify doping profiles in device fabrication, ensuring proper electrical characteristics in integrated circuits.
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