GB/T 29332-2012

Active

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT)

半导体器件 分立器件 第9部分:绝缘栅双极晶体管(IGBT)

Standard Type
GBT
ICS
31.080.30
CCS
L42
Status
Active
Issue Date
2012-12-31
Implementation
2013-06-01
Centralized Committee
工业和信息化部(电子)
Issuing Authority
工业和信息化部(电子)

Application Summary AI generated

This standard specifies the essential ratings, characteristics, and testing methods for insulated-gate bipolar transistors (IGBTs) used as discrete semiconductor devices. It is applied in the design, quality assessment, and procurement of IGBTs for power electronics applications, such as inverters, motor drives, and power supplies. The standard ensures consistent performance and reliability testing across manufacturers and end-users in the electronics industry.

Related Standards

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.