GB/T 25188-2010

This standard specifies the use of X-ray photoelectron spectroscopy (XPS) for measuring the thickness of ultrathin silicon oxide layers (typically less than 10 nm) on silicon wafers. It is applied in the semiconductor manufacturing industry for process control and quality assurance during gate oxide formation and other critical thin-film deposition steps. The method provides a non-destructive, accurate thickness assessment essential for ensuring device performance and reliability in integrated circuit fabrication.