GB/T 20176-2006
AbolishedSurface chemical analysis-Secondary-ion mass spectrometry-Determination of boron atomic concentration in silicon using uniformly doped materials
表面化学分析 二次离子质谱 用均匀掺杂物质测定硅中硼的原子浓度
Application Summary AI generated
This standard specifies a method for determining the atomic concentration of boron in silicon using secondary-ion mass spectrometry (SIMS) with uniformly doped reference materials. It is applied in the semiconductor industry for quality control and process development, particularly for calibrating SIMS instruments to ensure accurate measurement of boron dopant levels in silicon wafers. The standard is used in analytical testing contexts where precise quantification of boron concentration is critical for device performance.
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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.