GB/T 31225-2014
ActiveTest method for the thickness of silicon oxide on Si substrate by ellipsometer
椭圆偏振仪测量硅表面上二氧化硅薄层厚度的方法
Application Summary AI generated
This standard specifies the test method for measuring the thickness of silicon dioxide (SiO₂) thin layers on silicon (Si) substrates using an ellipsometer. It is applied in the semiconductor manufacturing industry for quality control and process monitoring of oxide layers during integrated circuit fabrication. The method ensures accurate, non-destructive thickness measurements critical for device performance and reliability.
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