GB/T 29056-2012
AbolishedTrichlorosilane for silicon epitaxy - Determination of boron，aluminium，phosphorus，vanadium，chrome，manganese，iron，cobalt，nickel，copper，molybdenum，arsenic and antimony content - Inductively coupled plasma mass spectrometric method
硅外延用三氯氢硅化学分析方法 硼、铝、磷、钒、铬、锰、铁、钴、镍、铜、钼、砷和锑量的测定 电感耦合等离子体质谱法
Application Summary AI generated
This standard specifies an inductively coupled plasma mass spectrometry (ICP-MS) method for determining trace levels of thirteen metallic and non-metallic impurities in trichlorosilane used for silicon epitaxy. It is applied in the semiconductor industry to ensure the purity of trichlorosilane feedstock, which directly impacts the electrical properties and defect density of epitaxial silicon layers. The method is critical for quality control in the production of high-purity silicon wafers for integrated circuits and other electronic devices.
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