GB/T 8758-2006
ActiveMeasuring thickness of epitaxial layers of gallium arsenide by infrared interference
砷化镓外延层厚度红外干涉测量方法
Application Summary AI generated
This standard specifies the method for measuring the thickness of epitaxial layers on gallium arsenide (GaAs) substrates using infrared interference. It is applied in the semiconductor and optoelectronics industries for quality control during the production of GaAs-based devices, such as high-frequency transistors, laser diodes, and solar cells. The technique is used in manufacturing and testing environments to ensure epitaxial layer uniformity and compliance with design specifications.
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