GB/T 8757-2006
ActiveDetermination of carrier concentration in gallium arsenide by the plasma resonance minimum
砷化镓中载流子浓度等离子共振测量方法
Application Summary AI generated
This standard specifies a method for determining carrier concentration in gallium arsenide (GaAs) semiconductors by measuring the plasma resonance minimum in infrared reflectance spectra. It is applied in the metallurgy and semiconductor materials industries for quality control and characterization of GaAs wafers used in optoelectronic and high-frequency electronic devices. The method is particularly relevant for non-destructive testing during material production and device fabrication processes.
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