GB/T 4326-2006
AbolishedExtrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
非本征半导体单晶霍尔迁移率和霍尔系数测量方法
Application Summary AI generated
This standard specifies the measurement method for Hall mobility and Hall coefficient in extrinsic semiconductor single crystals. It is applied in the metallurgy and semiconductor materials industries for quality control and characterization of doped silicon, germanium, and compound semiconductor wafers. The standard is used during material development, production, and incoming inspection to assess carrier concentration and electrical transport properties.
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