GB/T 4060-2007
AbolishedPolycrystalline silicon - examination method - vacuum zone - melting on boron
硅多晶真空区熔基硼检验方法
Application Summary AI generated
This standard specifies a method for determining the boron content in polycrystalline silicon by vacuum zone melting. It is applied in the metallurgy and semiconductor industries for quality control of high-purity silicon feedstock used in solar cell and electronic device manufacturing. The test evaluates boron concentration through resistivity measurement after zone refining, ensuring material suitability for subsequent crystal growth processes.
Related Standards
GB/T 19289-2003
Methods of measurement of density，resistivity and stacking factor of electrical steel sheet and strip
GB/T 19346-2003
Measuring method of magnetic properties at alternative current for amorphous and nanocrystalline soft magnetic alloys
GB/T 6524-2003
Metallic powders--Determination of particle size distribution by gravitational sedimentation in a liquid and attenuation measurement
GB/T 2976-2004
Metallic materials--Wire--Wrapping test
GB/T 4160-2004
Steel-strain ageing sensibility test(Charpy impact method)
GB/T 12689.9-2004
The methods for chemical analysis of zinc and zinc alloys--The determination of antimony content--The atomic fluorescence spectrometer and the flame atomic absorption spectrometric method
GB/T 12689.6-2004
The methods for chemical analysis of zinc and zinc alloys--The determination of lead content--The oscillopolarographic method
GB/T 12689.10-2004
The methods for chemical analysis of zinc and zinc alloys--The determination of tin content--The phenylfluorone-cetyltrimethyla-mmonium bromide spectrophotometric method
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.