GB/T 33763-2017

Active

Test method for dislocation density of sapphire single crystal

蓝宝石单晶位错密度测量方法

Standard Type
GBT
ICS
77.040
CCS
H25
Status
Active
Issue Date
2017-05-31
Implementation
2017-12-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the test method for measuring dislocation density in sapphire single crystals, primarily using chemical etching and optical microscopy. It is applied in the metallurgy and materials science industries for quality control of sapphire substrates used in LEDs, optical windows, and semiconductor wafers. The method ensures consistency in crystal perfection assessment during manufacturing and incoming inspection.

Related Standards

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.