GB/T 33657-2017

Active

Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells

纳米技术 晶圆级纳米尺度相变存储单元电学操作参数测试规范

Standard Type
GBT
ICS
31.200
CCS
L56
Status
Active
Issue Date
2017-05-12
Implementation
2017-12-01
Centralized Committee
中国科学院
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the testing methods and conditions for measuring electrical operating parameters of wafer-level nano-scale phase change memory cells, including programming, erasing, and reading operations. It is applied in the semiconductor industry for the characterization and quality control of phase change memory devices during research, development, and manufacturing processes. The standard ensures consistent and reliable evaluation of memory cell performance at the nanoscale.

Related Standards

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.