GB/T 32816-2016
ActiveSilicon-based MEMS fabrication technology—Specification for criterion of the combination of the deep etching and bonding process
硅基MEMS制造技术 以深刻蚀与键合为核心的工艺集成规范
Application Summary AI generated
This standard specifies the technical requirements, process parameters, and quality criteria for integrating deep reactive ion etching (DRIE) with wafer bonding in silicon-based MEMS fabrication. It is applied in the semiconductor and microelectromechanical systems (MEMS) industry to ensure reliable process control and repeatability for devices such as inertial sensors, microfluidic chips, and pressure sensors. The standard is used during process development, production, and quality testing to validate the combined deep etching and bonding sequence.
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