GB/T 32814-2016

Active

Silicon-based MEMS fabrication technology—Specification for criterion of the SOI wafer based MEMS process

硅基MEMS制造技术 基于SOI硅片的MEMS工艺规范

Standard Type
GBT
ICS
31.200
CCS
L55
Status
Active
Issue Date
2016-08-29
Implementation
2017-03-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the process requirements, quality control, and testing methods for fabricating Micro-Electro-Mechanical Systems (MEMS) devices using Silicon-on-Insulator (SOI) wafers. It is applied in the semiconductor and microelectronics industries, particularly for manufacturing MEMS sensors, actuators, and resonators where precise structural layer thickness and electrical isolation are critical. The standard ensures consistency and reliability in processes like deep reactive-ion etching (DRIE) and wafer bonding for high-volume production.

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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.