GB/T 32282-2015

Active

Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy

氮化镓单晶位错密度的测量 阴极荧光显微镜法

Standard Type
GBT
ICS
77.040
CCS
H21
Status
Active
Issue Date
2015-12-10
Implementation
2016-11-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies a test method for measuring the dislocation density of gallium nitride (GaN) single crystals using cathodoluminescence spectroscopy. It is applied in the metallurgy and semiconductor materials industries to evaluate crystal quality during the production and quality control of GaN substrates used in optoelectronic and high-power electronic devices. The method provides a quantitative assessment of structural defects critical for device performance and reliability.

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