GB/T 32189-2015

Active

Test method for surface roughness of GaN single crystal substrate by atomic force microscope

氮化镓单晶衬底表面粗糙度的原子力显微镜检验法

Standard Type
GBT
ICS
77.040
CCS
H21
Status
Active
Issue Date
2015-12-10
Implementation
2016-11-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the test method for measuring the surface roughness of gallium nitride (GaN) single crystal substrates using an atomic force microscope (AFM). It is applied in the semiconductor and optoelectronics industries to evaluate the surface quality of GaN substrates used for manufacturing high-brightness LEDs, laser diodes, and power electronic devices. The method ensures consistent roughness measurements critical for epitaxial growth and device performance.

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