GB/T 32188-2015
ActiveThe method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
氮化镓单晶衬底片x射线双晶摇摆曲线半高宽测试方法
Application Summary AI generated
This standard specifies the test method for measuring the full width at half maximum (FWHM) of the double crystal X-ray rocking curve for gallium nitride (GaN) single crystal substrates. It is applied in the metallurgy and semiconductor materials industries to evaluate the crystalline quality and defect density of GaN wafers used in optoelectronic and power electronic devices. The method provides a quantitative basis for quality control during substrate manufacturing and incoming inspection for device fabrication.
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