GB/T 31351-2014
AbolishedNondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
碳化硅单晶抛光片微管密度无损检测方法
Application Summary AI generated
This standard specifies a nondestructive test method for measuring the micropipe density on polished monocrystalline silicon carbide (SiC) wafers. It is applied in the semiconductor materials industry, specifically for quality control during the manufacturing of SiC substrates used in high-power and high-frequency electronic devices. The method ensures wafer integrity without damaging the surface, critical for subsequent epitaxial growth and device fabrication.
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