GB/T 28275-2012

Active

Silicon-based MEMS fabrication technology - Specification for KOH etch process

硅基MEMS制造技术 氢氧化钾腐蚀工艺规范

Standard Type
GBT
ICS
31.200
CCS
L55
Status
Active
Issue Date
2012-05-11
Implementation
2012-12-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the technical requirements, process parameters, and quality control methods for the potassium hydroxide (KOH) anisotropic wet etching of silicon wafers in MEMS fabrication. It is applied in the semiconductor and microelectronics industries for producing microstructures such as cantilevers, membranes, and trenches in accelerometers, pressure sensors, and microfluidic devices. The standard ensures consistent etch rates, uniformity, and surface quality during batch processing in cleanroom manufacturing environments.

Related Standards

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.