GB/T 26070-2010
ActiveCharacterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
化合物半导体抛光晶片亚表面损伤的反射差分谱测试方法
Application Summary AI generated
This standard specifies a method for characterizing subsurface damage in polished compound semiconductor wafers using reflectance difference spectroscopy. It is applied in the metallurgy and semiconductor manufacturing industries to evaluate the quality of polished surfaces, particularly for wafers used in optoelectronic and high-frequency electronic devices. The method helps detect and quantify subsurface defects introduced during polishing, ensuring wafer integrity for subsequent device fabrication.
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