GB/T 19444-2004
AbolishedOxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的测定 间隙氧含量减少法
Application Summary AI generated
This standard specifies a method for characterizing oxygen precipitation in silicon wafers by measuring the reduction of interstitial oxygen content. It is applied in the semiconductor industry for quality control and process monitoring of silicon wafers used in integrated circuit manufacturing. The test is typically conducted after thermal processing steps to evaluate the wafer's internal gettering capability and structural stability.
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