GB/T 17170-2015
ActiveTest method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法
Application Summary AI generated
This standard specifies a test method for measuring the concentration of the EL2 deep donor defect in semi-insulating gallium arsenide (GaAs) single crystals using infrared absorption spectroscopy. It is applied in the metallurgy and semiconductor materials industries for quality control and characterization of GaAs substrates used in high-frequency electronic devices, such as monolithic microwave integrated circuits (MMICs) and optoelectronic components. The method ensures the material's resistivity and uniformity meet the requirements for device fabrication.
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