GB/T 1557-2006
AbolishedThe method of determining interstitial oxygen content in silicon by infrared absorption
硅晶体中间隙氧含量的红外吸收测量方法
Application Summary AI generated
This standard specifies the infrared absorption method for measuring interstitial oxygen content in silicon crystals. It is applied in the semiconductor industry for quality control and material characterization of silicon wafers used in integrated circuit and solar cell manufacturing. The method ensures consistent oxygen concentration measurements, which affect mechanical strength and electrical properties of silicon substrates.
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