GB/T 14849.4-2014
ActiveMethods for chemical analysis of silicon metal―Part 4：Determination of impurity contents―Inductively coupled plasma atomic emission spectrometric method
工业硅化学分析方法 第4部分：杂质元素含量的测定 电感耦合等离子体原子发射光谱法
Application Summary AI generated
This standard specifies the inductively coupled plasma atomic emission spectrometric (ICP-AES) method for determining impurity element contents in silicon metal. It is applied in the metallurgical industry for quality control and chemical analysis of industrial silicon, particularly for detecting trace impurities such as iron, aluminum, and calcium. The method is used in production and testing laboratories to ensure silicon metal meets specified purity requirements for applications like solar-grade silicon and aluminum-silicon alloys.
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